Approximate ab initio simulations of amorphous silicon and glassy chalcogenides
نویسندگان
چکیده
A classic problem of materials theory is to understand the properties of glasses and amorphous materials. Comprehension of disordered systems requires as an initial step atomistic models (coordinates of the atoms) that reproduce the known experimental features of the material. This includes structural (diffraction) information of course, but also higher-order correlations (as from new fluctuation electron microscopy techniques), dynamical information (inelastic neutron scattering, Raman and infrared measurements), electronic and optical information (photoelectron spectroscopy, optical spectra). Models proposed which are jointly in agreement with this array of measurements are likely to enable new insights and we name such models in this paper realistic. With such models available, theoretical analysis of properties beside structure becomes appropriate. The electronic and optical properties are commonly of most interest to applications. Such models also enable studies of localization, electron dynamics and other issues of fundamental appeal. 2002 Elsevier Science Ltd. All rights reserved.
منابع مشابه
Approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon with inner voids
We have performed an approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon (a-Si:H) using a molecular dynamics method. A 216-atom model for pure amorphous silicon (a-Si) has been employed as a starting point for our a-Si:H models with voids that were made by removing a cluster of silicon atoms out of the bulk and terminating the resulting dangling bonds w...
متن کاملAb initio simulation of first-order amorphous-to-amorphous phase transition of silicon
The pressure-induced phase transition in amorphous silicon ~a-Si! is studied using ab initio constantpressure molecular-dynamic simulations. Crystalline silicon ~c-Si! shows a phase transformation from diamond-to-simple hexagonal at 29.5 GPa, whereas a-Si presents an irreversible sharp transition to an amorphous metallic phase at 16.25 GPa. The transition pressure of a-Si is also calculated fro...
متن کاملEnhanced amorphous stability of carbon-doped Ge2Sb2Te5: Ab Initio investigation
The effects of carbon doping on structural and electronic properties of amorphous Ge2Sb2Te5 are studied by using ab initio molecular dynamics simulations. In comparison with Si, N, and O dopants, C dopants are found to fundamentally alter the local order of amorphous network by increasing the population of tetrahedral Ge atoms significantly. In addition, the density of ABAB-type squared rings i...
متن کاملEnergetics of Hydrogen in Amorphous Silicon: an ab initio study
Using ab initio density functional calculations, we investigate the energetics of hydrogen in amorphous silicon. We compare a hydrogen at a silicon bond center site in a-Si to one in c-Si. In addition, we identify the energetics of the dominant traps for H in a-Si. The present calculations are used to elucidate many experiments and concepts regarding hydrogen in amorphous silicon.
متن کاملThermally driven hopping and electron transport in amorphous materials from density functional calculations
In this paper we study electron dynamics and transport in models of amorphous silicon and amorphous silicon hydride. By integrating the time-dependent Kohn–Sham equation, we compute the time evolution of electron states near the gap, and study the spatial and spectral diffusion of these states due to lattice motion. We perform these calculations with a view to developing ab initio hopping trans...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2001